Defect characterization studies on irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors
نویسندگان
چکیده
High-energy physics detectors with internal charge multiplication, like Low Gain Avalanche Detectors (LGADs), that will be used for fast timing in the High Luminosity LHC experiments, have to exhibit a significant radiation tolerance. In this context, impact of on highly boron-doped gain layer is particular interest, since due so-called Acceptor Removal Effect (ARE) radiation-induced deactivation active boron dopants takes place, causing progressive loss increasing irradiation level. paper we present defect-spectroscopy measurements (Deep-Level Transient Spectroscopy and Thermally Stimulated Current technique) neutron, proton electron irradiated p-type silicon pad diodes different resistivity as well LGADs neutron at fluences up 1×1015 neq/cm2. We show compared determination LGAD defect introduction rates less straightforward they are strongly influenced by layer. The measured capacitance has strong frequency temperature dependence which makes DLTS challenging perform results difficult interpret. With TSC technique defects formed nicely observed can diodes. However, exact assignment or bulk region remains amplification effect impacts concentrations. also demonstrate that, depending measurement conditions, induced electric fields built signal current.
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research
سال: 2023
ISSN: ['1872-9576', '0168-9002']
DOI: https://doi.org/10.1016/j.nima.2022.167977